| PART |
Description |
Maker |
| 2SK2411-Z |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB
Switching N-Channel Power MOS FET
|
NEC Electronics
|
| RJF0612JPE-00-J3 |
60V - 50A - N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| CPC3701C CPC3701CTR CPC370112 |
60V, Depletion-Mode, N-Channel Vertical DMOS FET
|
IXYS Corporation
|
| MSN0650K MSN0650K-TO251 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN0675D MSN0675D-TO220-3L |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| STT3458N12 |
3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| RJF0612DPE-00-J3 |
60V - 50A - N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| MSN0603 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
| RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching
60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TP0606 |
P-Channel Enhancement-Mode Vertical DMOS FET(击穿电压-60V，低门限2.4V，P沟道增强型垂直DMOS结构场效应管) P通道增强模式垂直的DMOS场效应管（击穿电 60V的低门限.4V，P沟道增强型垂直的DMOS结构场效应管
|
Elan Microelectronics, Corp.
|
| RJK0656DPB-00-J5 |
60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
